Pressure Effect on Yb_4As_3 and Its Related Compounds

この論文にアクセスする

この論文をさがす

著者

抄録

Transport properties of P-and Sb-doped Yb<SUB>4</SUB>As<SUB>3</SUB> weremeasured. The electrical resistivity measurement of Yb<SUB>4</SUB> (As<SUB>0. 88</SUB>Sb<SUB>0. 12</SUB>) <SUB>3</SUB> under various pressure up to 8 GPa was performed These results were compared with that of pure Yb<SUB>4</SUB>As<SUB>3</SUB> under high pressure. The substitution effect of Sb is very similar to the pressure effect, however, there is a big differencebetween them. This similarity strongly suggests that the mobility of the electron is much smaller compared to that of the hole.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 605-607, 1998 

    The Japan Society of High Pressure Science and Technology

参考文献:  5件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10002691161
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4493996
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
ページトップへ