Pressure Effect on Yb_4As_3 and Its Related Compounds
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Transport properties of P-and Sb-doped Yb<SUB>4</SUB>As<SUB>3</SUB> weremeasured. The electrical resistivity measurement of Yb<SUB>4</SUB> (As<SUB>0. 88</SUB>Sb<SUB>0. 12</SUB>) <SUB>3</SUB> under various pressure up to 8 GPa was performed These results were compared with that of pure Yb<SUB>4</SUB>As<SUB>3</SUB> under high pressure. The substitution effect of Sb is very similar to the pressure effect, however, there is a big differencebetween them. This similarity strongly suggests that the mobility of the electron is much smaller compared to that of the hole.
- The Review of High Pressure Science and Technology
The Review of High Pressure Science and Technology 7, 605-607, 1998
The Japan Society of High Pressure Science and Technology