Pressure Effect on Metal-Insulator Transition in Y_<1-x>Ca_xTiO_3
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The magnetic susceptibility and electrical resistivity in the metal-insulator (MI) transition of a mixed-valent Ti-oxide system, Y<SUB>1-x</SUB> Ca<SUB>x</SUB>RTiO<SUB>3</SUB>, is investigated as a function of pressure. This system exhibits obviously the temperatureinduced MI transition at x=0. 3-0. 4. At the low temperature metallic phase, susceptibility, X (T), is strongly suppressed with pressure. On the other hand, in the high temperature semiconductiong phase X (T) obeying the Curie-Weiss law is not affected strongly with pressure. The coefficient of the T<SUP>2</SUP>-term in resistivity, A, and the residual resistivity, ρ (0), are decreases rapidly with pressure. At x=0. 375 and 0. 39, we recognize the relation of A∝X (10 K) <SUP>2</SUP> at the low temperature metallic state.
- The Review of High Pressure Science and Technology
The Review of High Pressure Science and Technology 7, 608-610, 1998
The Japan Society of High Pressure Science and Technology