Physical Properties of SmS Metallic Phase at Low temperature.

• Ohashi M.

  Physics Department, Graduate School of Science ISSP, University of Tokyo

• Kondo D.

  Physics Department, Graduate School of Science

• Sato N.

  Physics Department, Graduate School of Science

• Suzuki T.

  Physics Department, Graduate School of Science

• Komatsubara T.

  Physics Department, Center for Low Temperature Science, Tohoku University

• Takahashi H.

  College of Humanities and Sciences, Nihon University

• Môri N.

  ISSP, University of Tokyo

書誌事項

タイトル別名

• Physical Properties of SmS Metallic Pha

抄録

The resistivity of SmS single crystal has been measured under pressure up to 8 GPa. As an applied pressure is increased, the electrical resistivity changes drastically. In particular it shows a kink at T_M in the p vs T curve above 2 GPa. We found that the electrical resistivity shows the ρ=ρ₀+AT₂ dependencewith a largecoefficient Abelow T_M. If we ascribe this term to the electron-electron scattering, the electron correlation effect plays a dominant role in the high pressure region, which may correspond to the large γ value.

収録刊行物

• 高圧力の科学と技術

  高圧力の科学と技術 7 611-613, 1998

  日本高圧力学会

キーワード

• SmS
• resistivity
• electron correlation
• intermediate valent state
• semiconductor-metal transition

詳細情報

• CRID: 1390001204380381824
• NII論文ID: 10002691180
• NII書誌ID: AN10452913
• DOI: 10.4131/jshpreview.7.611
• ISSN: 13481940
• ISSN: 0917639X
• NDL書誌ID: 4493998
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4493998
• 本文言語コード: en
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可