Effect of Pressure on Thermoelectric Power of Ni(S_<1-x>Se_x)_2

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Electrical resistivity and thermoelectric power measurements were carried out on single crystals of Ni (S<SUB>0. 9</SUB>Se<SUB>0. 1</SUB>) <SUB>2</SUB> under hydrostatic pressure up to 8. 0 GPa for electrical resistivity measurements and up to 1. 5 GPa for thermoelectric power measurements, respectively, in a temperature range between 4. 2 K and 300 K. The relation Se 10%=1. 0 GPa is confirmed to be valid also for the thermoelectric power of Ni (S<SUB>1-x</SUB>Se<SUB>x</SUB>) <SUB>2</SUB> compounds. According to a one-band two-carriers model, the contributions of electron or hole are nearly in balance below approximately 100 K, while the contribution of hole dominates that of electron above approximately 100 K.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 629-631, 1998

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002691240
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4494004
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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