Effect of Pressure on the Electrical Resistivity of Co/Cu Magnetic Multilayers
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In the present work we report the effect of pressure on the temperature dependent electrical resistivity ρ (T) of three Co/Cu magnetic multilayers (MML) having different Cu layer thickness, t<SUB>cu</SUB>. Two are antiferromagnetic (AF) and one is ferromagnetic (F). It is found that at room temperature the electrical resistivity, ρ, of F sample decreases largely by applying pressure compared with that of AF samples; 8 % and 4 % decrease at 2. 2 GPa for F and AF samples, respectively. At low temperatures MMLs show a large residual resistivity ρ<SUB>0</SUB> reflecting much existence of magnetic and structural disorders in the sample, which decreases largely with increasing pressure having pressure coefficient -2. 3×10<SUP>-2</SUP> GPa. Furthermore, the value of the coefficient of a T<SUP>2</SUP>-term of ρ (T), A, is decreased by applying pressure and its decreasing rate, ∂lnA/∂P, of Co/Cu MML with AF state is much larger than that with F state. It is suggested that the s-d interband scattering of conduction electrons due to local spin disorder in Co/Cu MML with AF state is more sensitive to pressure than that in Co/Cu with F state.
- The Review of High Pressure Science and Technology
The Review of High Pressure Science and Technology 7, 644-646, 1998
The Japan Society of High Pressure Science and Technology