Effect of Pressure on Hopping Conduction in Amorphous Ge Alloys

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The electrical conductivity σ has been measured at pressures P to 8 GPa and temperatures T of 77-300K in evaporated amorphous Ge (a-Ge), a-Ge-Cu alloys and a-Ge-Al alloys. The T dependence of σ is well described by a power law at low temperatures below 150 K, which is expected from a multi-phonon tunneling transition process model with weak electron-lattice coupling, rather than the Mott's variable range hopping conduction model. The exponent n in the power law changes with increasing pressure. For both a-Ge<SUB>1-x</SUB>Cu<SUB>x</SUB> and a-Ge<SUB>1-x</SUB>Al<SUB>x</SUB> alloys, d (ln n) /dP show positive values in the low pressure region and negative values in the high pressure region. Results are discussed from several hopping conduction models.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 647-649, 1998 

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002691304
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4494010
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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