Effect of Pressure on Hopping Conduction in Amorphous Ge Alloys
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Abstract
The electrical conductivity σ has been measured at pressures P to 8 GPa and temperatures T of 77300K in evaporated amorphous Ge (aGe), aGeCu alloys and aGeAl alloys. The T dependence of σ is well described by a power law at low temperatures below 150 K, which is expected from a multiphonon tunneling transition process model with weak electronlattice coupling, rather than the Mott's variable range hopping conduction model. The exponent n in the power law changes with increasing pressure. For both aGe<SUB>1x</SUB>Cu<SUB>x</SUB> and aGe<SUB>1x</SUB>Al<SUB>x</SUB> alloys, d (ln n) /dP show positive values in the low pressure region and negative values in the high pressure region. Results are discussed from several hopping conduction models.
Journal

 The Review of High Pressure Science and Technology

The Review of High Pressure Science and Technology 7, 647649, 1998
The Japan Society of High Pressure Science and Technology