Pressure Induced Electrical Resistance Behaviour of Fe-24-Mn-6Si Shape Memory Alloy.
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- Saravanan V.
- Department of Physics, Anna University
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- Sekar M.
- Materials Science Division, Indira Gandhi Centre for Atomic Research
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- Rajan K. Govinda
- Materials Science Division, Indira Gandhi Centre for Atomic Research
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- Sahu P. Ch.
- Materials Science Division, Indira Gandhi Centre for Atomic Research
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- Yousuf Mohammad
- Materials Science Division, Indira Gandhi Centre for Atomic Research
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- Shekar N. V. Chandra
- Materials Science Division, Indira Gandhi Centre for Atomic Research
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- Jaya N. Victor
- Department of Physics, Anna University
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- Ohtsuka H.
- Tsukuba Magnet Lab, National Research Institute for Metals
Bibliographic Information
- Other Title
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- Pressure Induced Electrical Resistance Behavior of Fe-24Mn-6Si Shape Memory Alloy
- Pressure Induced Electrical Resistance
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Abstract
Electrical resistance behaviour of Fe-24Mn-6Si shape memory alloy (SMA) was studied up to ∼6 GPa using Opposed Anvil High Pressure Device (OAHPD) at ambient temperature. Electrical resistance increases steeply up to ∼0. 8 GPa followed by a slow decrease up to ∼6 GPa. X-ray diffraction pattern of pressure treated specimens do not show any new lines indicating the absence of any structural transition.
Journal
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- The Review of High Pressure Science and Technology
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The Review of High Pressure Science and Technology 7 668-669, 1998
The Japan Society of High Pressure Science and Technology
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Details 詳細情報について
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- CRID
- 1390001204381377536
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- NII Article ID
- 10002691361
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- NII Book ID
- AN10452913
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- ISSN
- 13481940
- 0917639X
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- NDL BIB ID
- 4494017
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed