High-Pressure Study of Deep Emission Band at GaInP/GaAs Interface
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We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at 77 K and at pressures up to ∼5 GPa to investigate the characteristics of the 1. 46 eV deep emission band. It shows a very long decay time, and might be attributed to spatially indirect recombinations of electrons and holes at the ordered GaInP/GaAs interface. With increasing pressure, the PL peak shifts towards higher energies at a rate slightly smaller than that of the 1. 52 eV band from the GaAs well. The PL behavior observed at high pressures can be partly explained by the presence of repulsion between the Γ-folded energy states in ordered GaInP.
- The Review of High Pressure Science and Technology
The Review of High Pressure Science and Technology 7, 715-717, 1998
The Japan Society of High Pressure Science and Technology