GaN Single Crystals Grown by High Pressure Solution Method

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In the paper, the results of crystallization of substrate quality GaN crystals obtained with the use of large volume high pressure reactor are presented. GaN single crystals are grown from the solution of atomic nitrogen in liquid Ga at N<SUB>2</SUB> pressure up to 20 kbar. Two years ago, we have reported stable growth of n-type GaN crystals of 2-3mm in size. At present both n-type and semi-insulating substrate crystals with surface area up to 1cm<SUP>2</SUP>, with dislocation density of 10<SUP>3</SUP> - 10<SUP>5</SUP> cm<SUP>-2</SUP> are obtained and successfully used for homoepitaxy by MOCVD and MBE. It is shown that the quality of GaN crystals does not deteriorate with the increasing size and that epi-ready surfaces of GaN substrates can be obtained. Two-dimensional growth by propagation of monatomic steps of GaN homoepitaxial layers is presented as a verification of the quality of GaN substrates.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 760-762, 1998 

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002691750
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4494047
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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