GaN Single Crystals Grown by High Pressure Solution Method
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In the paper, the results of crystallization of substrate quality GaN crystals obtained with the use of large volume high pressure reactor are presented. GaN single crystals are grown from the solution of atomic nitrogen in liquid Ga at N<SUB>2</SUB> pressure up to 20 kbar. Two years ago, we have reported stable growth of n-type GaN crystals of 2-3mm in size. At present both n-type and semi-insulating substrate crystals with surface area up to 1cm<SUP>2</SUP>, with dislocation density of 10<SUP>3</SUP> - 10<SUP>5</SUP> cm<SUP>-2</SUP> are obtained and successfully used for homoepitaxy by MOCVD and MBE. It is shown that the quality of GaN crystals does not deteriorate with the increasing size and that epi-ready surfaces of GaN substrates can be obtained. Two-dimensional growth by propagation of monatomic steps of GaN homoepitaxial layers is presented as a verification of the quality of GaN substrates.
- The Review of High Pressure Science and Technology
The Review of High Pressure Science and Technology 7, 760-762, 1998
The Japan Society of High Pressure Science and Technology