GaN Single Crystals Grown by High Pressure Solution Method.

DOI Web Site 10 References
  • Lucznik B.
    High Pressure Research Center Polish Academy of Sciences
  • Bockowski M.
    High Pressure Research Center Polish Academy of Sciences
  • Wroblewski M.
    High Pressure Research Center Polish Academy of Sciences
  • Grzegory I.
    High Pressure Research Center Polish Academy of Sciences
  • Krukowski S.
    High Pressure Research Center Polish Academy of Sciences
  • Nowak G.
    High Pressure Research Center Polish Academy of Sciences
  • Leszczynski M.
    High Pressure Research Center Polish Academy of Sciences
  • Teisseyre G.
    High Pressure Research Center Polish Academy of Sciences
  • Pakula K.
    Institute of the Experimental Physics University of Warsaw
  • Baranowski J. M.
    Institute of the Experimental Physics University of Warsaw
  • Suski T.
    High Pressure Research Center Polish Academy of Sciences
  • Porowski S.
    High Pressure Research Center Polish Academy of Sciences

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  • GaN Single Crystals Grown by High Press

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Abstract

In the paper, the results of crystallization of substrate quality GaN crystals obtained with the use of large volume high pressure reactor are presented. GaN single crystals are grown from the solution of atomic nitrogen in liquid Ga at N2 pressure up to 20 kbar. Two years ago, we have reported stable growth of n-type GaN crystals of 2-3mm in size. At present both n-type and semi-insulating substrate crystals with surface area up to 1cm2, with dislocation density of 103 - 105 cm-2 are obtained and successfully used for homoepitaxy by MOCVD and MBE. It is shown that the quality of GaN crystals does not deteriorate with the increasing size and that epi-ready surfaces of GaN substrates can be obtained. Two-dimensional growth by propagation of monatomic steps of GaN homoepitaxial layers is presented as a verification of the quality of GaN substrates.

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