Growth and Modification of Diamond Anvils by Chemical Vapor Deposition

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Homoepitaxial diamond films were grown on (100) natural type Ia diamond anvils using high density microwave plasma enhanced chemical vapor deposition (CVD). The growth morphology of the epitaxial films were compared for substrate temperatures from 1075 to 1365°C and thane precursor concentrations of 1 and 2% in a hydrogen plasma at 90 Torr. The diamond layers were polished to near optical flatness using an industrial grade polycrystalline diamond (PCD) disc attached to a high rpm rotating wheel. Diamond anvils with CVD layers on the tips were tested up to a pressure of 74 GPa without any film deformation. The versatility of the diamond polishing apparatus allows damaged or CVD-grown anvils to be shaped into a beveled-tip geometry for use in ultra-high pressure applications.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 957-959, 1998 

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002692422
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4494113
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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