Boron Nitride Revisied

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抄録

The phase diagram published by Bundy & Wentorf [2] already shows cBN to be the stable fonn of boron nitride, in contrast to similar diagrams used today. This picture is supported by theoretical calculations by Maid et al. [5] and Solozhenko [6]. Results of compressibility measurements for cBN and hBN are presented . To clarify the picture of the phase diagram the transformation from hBN to cBN has been studied in a series of time dependent diffraction experiments using synchrotron radiation. The crystallization is found to go through the melt. In a second series of experiments the back-transformation of cBN to hBN was studied . Finally the experimental conditions for high pressure! high temperature synthesis of cBN could be lowered to 2. 5 GPa at 1800°C using amorphous boron nitride as starting material.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 975-979, 1998 

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002692481
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4494118
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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