Growth of Cubic Boron Nitride Single Crystal under High Pressure using Temperature Gradient Method

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Growth characteristics of single crystal cubic boron nitride (cBN) grown on a (111) surface of diamond seed crystal was studied. A temperature gradient method was employed by using lithium boron nitride as a solvent under 5. 5 GPa and 1500°C for 10 min to 100 hr. The island nucleation of (111) crystals was taken place even at 10 min. The island crystals were, then, coalesced and the (113) faces were dominantly appeared, followed by (113) faceted growth. Considering the growth rate of the crystal under constant P-T growing condition, the growth of the crystal in this system seemed to be controlled by the interface reaction on the crystal but not by the diffusion of the BN source in the reaction bath.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 980-982, 1998 

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002692500
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4494119
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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