Reaction Sintering of Si Coated-Diamond Fine Particles under Ultrahigh Pressure

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Fine diamond particles (from 0. 5 to 2μm) were successfully coated with silicon of 6. 6, 13. 8 and 20. 0vol% by PVD method. These coated particles were sintered under 5. 5GPa at 1723K for 0. 5h with a cubic type ultrahigh pressure apparatus. Silicon carbide in each sintered diamond compact was formed between the diamond particles during sintering and acted as a bonding material for the diamonds. The obtained sinter having silicon carbide of 21. 8vol% was fully densified and showed very high hardness (about 9700 HV 1. 0) as high as the diamond sinter produced for industrial usage.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 1010-1012, 1998 

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002692593
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4494129
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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