Reaction Sintering of Si Coated-Diamond Fine Particles under Ultrahigh Pressure
Fine diamond particles (from 0. 5 to 2μm) were successfully coated with silicon of 6. 6, 13. 8 and 20. 0vol% by PVD method. These coated particles were sintered under 5. 5GPa at 1723K for 0. 5h with a cubic type ultrahigh pressure apparatus. Silicon carbide in each sintered diamond compact was formed between the diamond particles during sintering and acted as a bonding material for the diamonds. The obtained sinter having silicon carbide of 21. 8vol% was fully densified and showed very high hardness (about 9700 HV 1. 0) as high as the diamond sinter produced for industrial usage.
- 高圧力の科学と技術 = The Review of high pressure science and technology
高圧力の科学と技術 = The Review of high pressure science and technology 7, 1010-1012, 1998
The Japan Society of High Pressure Science and Technology