Melting Behavior of .BETA.-SiC at High Pressure.

• Togaya Motohiro

  Department of Material Physics, Osaka University Faculty of Engineering Science, Osaka University

• Sugiyama Shin

  Department of Material Physics, Osaka University Faculty of Engineering Science, Osaka University

Bibliographic Information

Other Title

• Melting Behavior of β-SiC at High Pressure
• Melting Behavior of ベータ SiC at High Pre

Abstract

The melting behavior of β-SiC with diamond structure was investigated under high pressures up to about 10 GPa using a flash-heating device. The peritectic temperature, at which the SiC decomposes into two phases of carbon saturated liquid Si and solid carbon (graphite) by a peritectic reaction, increases with pressure and the formation temperature of one liquid phase (l-SiC) also tends to increase with pressure. The solubility of carbon in liquid Si reach 50% at about 10 GPa and β-SiC melts directly into l-SiC.

Journal

• The Review of High Pressure Science and Technology

  The Review of High Pressure Science and Technology 7 1037-1039, 1998

  The Japan Society of High Pressure Science and Technology

Keywords

• silicon carbide
• melting temperature
• peritectic reaction
• carbon solubility
• electrical resistivity

Details

• CRID: 1390282679359156096
• NII Article ID: 10002692729
• NII Book ID: AN10452913
• DOI: 10.4131/jshpreview.7.1037
• ISSN: 13481940
• ISSN: 0917639X
• NDL BIB ID: 4494139
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4494139
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed