Fabrication and Evaluation of Graded(Si-MoSi_2)/SiGe Thermoelectric Materials by HIP Sintering

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Based on the concept of functionally goaded materials, the thermoelectric conversion unit of SiGe with gaded electrodes was designed and fabricated by HIP sintering process in order to obtain a good electrical and mechanical contact. The composite of Si and MoSi<SUB>2</SUB> was used as the electrode, and the effect of the MoSi<SUB>2</SUB> volume fraction on the electrical resistivity was studied. The results show that the electrical resistivity decreases exponentially with increasing MoSi<SUB>2</SUB> content and reaches the order of 10<SUP>-4</SUP> Ω·cm when the volume fraction of MoSi<SUB>2</SUB> was beyond 25%. The graded (Si-MoSi<SUB>2</SUB>) /SiGe obtained has dense microstructures and well bonded interfaces. The electrical resistivity continuously decreased from the SiGe to the surface electrode in the zone of gaded structure.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 1060-1062, 1998 

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002692811
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4494147
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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