Hydrothermal Crystal Growht of low-Temperature Forms : Role of the Pressure Effect on the Density of Chemical Defects in the α-SiO_2 Lattice

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著者

    • LARGETEAU A.
    • Institut de Chimie de la Matiere Condensee de Bordeaux(I. C. M. C. B-C. N. R. S. -UPR 9048)

抄録

The crystal growth of single crystal of α-SiO<SUB>2</SUB> with a low concentration of chemical and physical defects appears an important challenge for the development of high frequency telecommunications [1]. Using the conventional hydrothermal process, with NaOH-1M as solvent, the influence of the pressure value on the O<SUP>2+</SUP> → OH<SUP>-</SUP> substitution into the α-SiO<SUB>2</SUB> lattice was studied, the crystal-growth conditions used were Tgrowth = 350°C, ΔT = 10°C, t = 10 days. When the pressure is increased from 125 MPa to 330 MPa, a strong decrease of the density of detected OH groups by IR spectroscopy is observed.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology

    高圧力の科学と技術 = The Review of high pressure science and technology 7, 1414-1416, 1998

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002694265
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    0917639X
  • NDL 記事登録ID
    4494253
  • NDL 雑誌分類
    ZP1(科学技術--化学・化学工業)
  • NDL 請求記号
    Z17-1589
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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