Hydrothermal Crystal Growht of low-Temperature Forms : Role of the Pressure Effect on the Density of Chemical Defects in the α-SiO_2 Lattice
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The crystal growth of single crystal of α-SiO<SUB>2</SUB> with a low concentration of chemical and physical defects appears an important challenge for the development of high frequency telecommunications . Using the conventional hydrothermal process, with NaOH-1M as solvent, the influence of the pressure value on the O<SUP>2+</SUP> → OH<SUP>-</SUP> substitution into the α-SiO<SUB>2</SUB> lattice was studied, the crystal-growth conditions used were Tgrowth = 350°C, ΔT = 10°C, t = 10 days. When the pressure is increased from 125 MPa to 330 MPa, a strong decrease of the density of detected OH groups by IR spectroscopy is observed.
- The Review of High Pressure Science and Technology
The Review of High Pressure Science and Technology 7, 1414-1416, 1998
The Japan Society of High Pressure Science and Technology