回路シミュレーションのための逆導通SIサイリスタモデル A Reverse Conduction Static Induction Thyristor Moodel for Circuit Simulation

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In a field of simulation concerning semiconductor power devices, there are process simulation, device simulation, circuit simulation. These simulations are selected for their purpose. In order to analyze static and dynamic phenomena of semiconductor power devices or passive devices, and to support the design of power conversion systems, many circuit simulation models of semiconductor power devices such as GTOs, IGBTs, Thyristors are fabricated.<br>In this paper, a reverse coducting static induction thyristor model is proposed. The model is made up of SI thyristor model with two transistor analogue and diode model with SPICE internal diode, capacitance and resistance. For confirming the accuracy of this circuit model, some experiments are carried out. As a result, good agreement are shown between the measured and calculated results.

収録刊行物

  • 電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society  

    電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society 118(5), 585-590, 1998-05 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10002726674
  • NII書誌ID(NCID)
    AN10012320
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09136339
  • NDL 記事登録ID
    4474241
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-1608
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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