Epitaxial growth and transport properties of a new III-V diluted magnetic semiconductor : GaMnAs
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- TANAKA M.
- Department of Electronic Engineering, The University of Tokyo, Research Development Corporation of Japan
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- HAYASHI T.
- Department of Electronic Engineering, The University of Tokyo
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- NISHINAGA T.
- Department of Electronic Engineering, The University of Tokyo
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- SHIMADA H.
- Cryogenic Center, The University of Tokyo
Bibliographic Information
- Other Title
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- III-V族希薄磁性半導体GaMnAsのエピタキシャル成長とその伝導特性
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Journal
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- 日本応用磁気学会学術講演概要集 = Digest of ... annual conference on magnetics in Japan
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日本応用磁気学会学術講演概要集 = Digest of ... annual conference on magnetics in Japan 20 115-, 1996-09-01
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Details 詳細情報について
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- CRID
- 1573387448886079744
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- NII Article ID
- 10002729033
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- NII Book ID
- AN10269644
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- Text Lang
- ja
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- Data Source
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- CiNii Articles