書誌事項
- タイトル別名
-
- Low Temperature Growth of Sol-Gel SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films by Low Pressure Annealing
- 減圧アニール法によるゾルゲルSrBi2Ta2O9薄膜の低温形成
- ゲンアツ アニールホウ ニヨル ゾルゲル SrBi2Ta2O9 ハクマク ノ
この論文をさがす
抄録
A new low temperature processing method to prepare SrBi2Ta2O9 thin films is proposed. These thin films were prepared on Pt/Ta/SiO2/Si substrates by a sol-gel method, and their structural and electrical properties were investigated. Films were annealed before and after the top Pt electrode deposition, respectively. The 1st annealing was performed in a 760Torr-oxygen ambient at 600°C for 30min., the 2nd annealing was performed in a 5Torr-oxygen ambient at 600°C for 30min.. The films were well crystallized and fine-grained after the 2nd annealing. The electrical characteristics of the 200-nm-thich film obtained by this new process, i.e., remanent polarization (Pr), coercive field (Ec), and the leakage current density (IL), were as follows; Pr=8.5μC/cm2, Ec=36kV/cm, IL =1×10-7A/cm2 (at 150kV/cm). This process is very attractive for highly integrated ferroelectric nonvolatile memory applications.
収録刊行物
-
- 電気学会論文誌C(電子・情報・システム部門誌)
-
電気学会論文誌C(電子・情報・システム部門誌) 117 (3), 227-232, 1997
一般社団法人 電気学会
- Tweet
詳細情報
-
- CRID
- 1390282679584491648
-
- NII論文ID
- 130006843664
- 10002809561
-
- NII書誌ID
- AN10065950
-
- ISSN
- 13488155
- 03854221
-
- NDL書誌ID
- 4149759
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可