減圧アニール法によるゾルゲルSrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>薄膜の低温形成

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タイトル別名
  • Low Temperature Growth of Sol-Gel SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films by Low Pressure Annealing
  • 減圧アニール法によるゾルゲルSrBi2Ta2O9薄膜の低温形成
  • ゲンアツ アニールホウ ニヨル ゾルゲル SrBi2Ta2O9 ハクマク ノ

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抄録

A new low temperature processing method to prepare SrBi2Ta2O9 thin films is proposed. These thin films were prepared on Pt/Ta/SiO2/Si substrates by a sol-gel method, and their structural and electrical properties were investigated. Films were annealed before and after the top Pt electrode deposition, respectively. The 1st annealing was performed in a 760Torr-oxygen ambient at 600°C for 30min., the 2nd annealing was performed in a 5Torr-oxygen ambient at 600°C for 30min.. The films were well crystallized and fine-grained after the 2nd annealing. The electrical characteristics of the 200-nm-thich film obtained by this new process, i.e., remanent polarization (Pr), coercive field (Ec), and the leakage current density (IL), were as follows; Pr=8.5μC/cm2, Ec=36kV/cm, IL =1×10-7A/cm2 (at 150kV/cm). This process is very attractive for highly integrated ferroelectric nonvolatile memory applications.

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