N⁺⁺埋め込みバッファ領域を有する新型IGBT

• 山田 富久

  三菱電機株式会社パワーデバイス事業統括部

• 高橋 英樹

  三菱電機株式会社パワーデバイス事業統括部

• 萩野 浩靖

  三菱電機株式会社パワーデバイス事業統括部

書誌事項

タイトル別名

• A High Performance IGBT with new N⁺buffer structure
• N++埋め込みバッファ領域を有する新型IGBT
• N++ウメコミ バッファ リョウイキ オ ユウスル シンガタ IGBT

抄録

We propose a new IGBT structure with a new N⁺buffer, and confirm by experiments and numerical simulations that the new IGBT is superior to the conventional IGBT.<br>The following results were obtained.<br>(1) According to our experiments, the new IGBT was able to decrease the total power loss, and the parallel operation became easier, compared with the conventional IGBT. Moreover, the short circuit ruggedness of the new IGBT was almost the same as that of the conventional IGBT by optimizing the ratio of the N⁺⁺buried layer.<br>(2) We clarified why the characteristics of the new IGBT was improved by numerical simulations.<br>(a) When the new IGBT is on, holes injected from the P⁺substrate flow through, keeping out of N⁺⁺buried layer. And the holes rapidly turn around the N⁺⁺buried layer when passing by, and hole concentration becomes even. Because the lifetime of the new IGBT is designed long, the hole concentration of the new IGBT increase in the N-layer. Therefore, the saturation voltage of the new IGBT is lower than that of the conventional IGBT<br>(b) Since the lifetime of the N^-layer of the new IGBT can be extended, as a result, the temperature dependence of the lifetime becomes small, and IZTC of the new IGBT is improved.<br>(c) In the turn-on state, the holes is injected through the N⁺buffer layer with lower concentration from the P⁺substrate, thus the turn-on speed of the new IGBT become quicker and the turn-on loss of the new IGBT is reduced.<br>(d) In the turn-off state, as the N^-layer is depleted completely, the carriers in N⁺buffer layer mainly influence on the tail current. There are little carriers in N⁺⁺buried layer of the new IGBT, so the turn-off loss of the new IGBT is reduced.<br>(e) Since the effect to prevent the holes being injected from P⁺substrate affects N^-layer, the amount of carriers in the N^-layer of the new IGBT is limited in the saturation current region. Therefore, the saturation current is also controlled, and the short circuit ruggedness of the new IGBT is not deteriorated.

収録刊行物

• 電気学会論文誌Ｃ（電子・情報・システム部門誌）

  電気学会論文誌Ｃ（電子・情報・システム部門誌） 117 (6), 732-740, 1997

  一般社団法人 電気学会

キーワード

• N⁺バッファ層
• 低損失
• 並列動作

詳細情報

• CRID: 1390282679584768256
• NII論文ID: 130006843812
• NII論文ID: 10002810503
• NII書誌ID: AN10065950
• DOI: 10.1541/ieejeiss1987.117.6_732
• ISSN: 13488155
• ISSN: 03854221
• NDL書誌ID: 4216200
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4216200
• Web Site: https://www.jstage.jst.go.jp/article/ieejeiss1987/117/6/117_6_732/_pdf
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