等温容量過渡分光法によるSi-MOS構造の深い準位の評価

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  • Evaluation of Deep Levels in Si-MOS Structure using ICTS Measurement
  • トウオン ヨウリョウ カト ブンコウホウ ニ ヨル Si-MOS コウゾウ ノ

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Interface traps and bulk traps induced by heavy metal impurities in Si-MOS structure have been characterized, using Isothermal Capacitance Transient Spectroscopy (ICTS). In addition, the use of MOS inversion time is proposed for the detection of a very low density of heavy metal impurities in the ICTS measurements.<br>As a result, it has been made clear that heavy metal impurities enhanced interface trap densities as well as induced bulk traps. The degree of the enhancement is varied by the species of heavy metal impurities. It is discussed that interface traps may be enhanced by the substitutional heavy metal impurities. Moreover, it has been ascertained that a very low level of contamination by heavy metals is able to be detected by using MOS inversion time. This has been experimentally shown by the use of copper impurities. Furthermore, it has been clarified from the change of MOS inversion time that interface traps are also detrimental to carrier generation lifetime.

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