Semiconducting and Thermoelectric properties of Aluminium Doped Iron Disilicides

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  • Al添加FeSi<sub>2</sub>の半導体的性質と熱電特性
  • Al添加FeSi2の半導体的性質と熱電特性
  • Al テンカ FeSi2 ノ ハンドウタイテキ セイシツ ト ネツデン トクセ

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Abstract

The phase analysis was carried out for the system of(2-y)FeSi2+yFeAl2 in the range 0≤y≤0.20 by an X-ray technique. The solid solution FeSi2-yAly was identified in the composition range 0≤y≤0.12. Electrical resistivity ρ and Hall coefficient were measured as a function of temperature over the range from 80 to 1100K. The measurement of thermal conductivity was also carried out by a comparative method at 300K. The pure FeSi2 was p-type semiconductor with the hole concentration np of 1.70×1023/m3 at 300K. ρ was independent of y in the range 0≤y≤0.02 and rapidly decreased above y=0.03. Below y=0.03, the hole mobility μH indicated the relationship of exp[-Eh/(kT)] in the temperature range from 200 to 300K, where Eh and k are the hopping energy and Boltzman constant, respectively. Eh was determined to be 0.110eV from the hopping mobility μpol=μ0 exp[-Eh/(kT)]. In the range 0.04≤y≤0.12, it was shown that the changes in μpol have relationships of T-3/2 and T3/2 above and below 250K, respectively, and the band conduction was predominant. The maximum figure of merit was found to be 9.6×10-5K-1 for y=0.08.

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