Preparation and thermoelectric properties of n-type lead telluride

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  • n形PbTeの作製と熱電特性
  • nガタ PbTe ノ サクセイ ト ネツデン トクセイ

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Abstract

Two types of n-type single crystals of PbTe were prepared. One is the undoped crystals by sublimation method under controlled Pb pressure where the electron concentration was covered from 1018 to 1019cm-3. The maximum figure of merit at 300K was 2.2×10-3K-1. The other is the iodine-doped crystals by Bridgman method using PbI2 as the source material of iodine. The electrical conductivity and Hall mobility were measured from 77 to 300K. The electron concentration was successfully controlled in the range from 5.0×1017 to 5.0×1019cm-3 by doping 700 to 6000 molppm PbI2. The temperature dependence of electron mobility indicated that the scattering mechanism of the electron changed from phonon scattering to impurity scattering with an increased amount of PbI2. From the results of electrical conductivity and thermoelectric powei measurements, the figure of merit estimated by using the literature data of thermal conductivity was 1.3×10-3K-1 at 2000 molppm PhI2.

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