Effect of phase composition and microstructure to thermoelectric property of silicon borides
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- Chen Lidong
- NAL-KRC
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- Goto Takashi
- Tohoku University, IMR
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- Li Jianhui
- Tohoku University, IMR
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- Niino Masayuki
- NAL-KRC
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- Hirai Toshio
- Tohoku University, IMR
Bibliographic Information
- Other Title
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- シリコンボライドの熱電特性に及ぼす相組成および微細構造の影響
- シリコン ボライド ノ ネツデン トクセイ ニ オヨボス ソウ ソセイ オヨビ
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Abstract
Phase relations of silicon-boron system in boron-rich region were studied by solid state reaction, and the boron-rich silicon boride specimens were prepared by arc-melting and spark plasma sintering. Rhombohedral SiBn(n=15-49) single phase and mixtures of SiB6 and SiBn were observed in the region B=93.7-98at% and B=86-93.7at%, respectively. The arc-melted specimens consisted of SiBn and free Si, while no free silicon was observed in the plasma sintered specimen. The thermoelectric properties of the plasma sintered and arc-melted specimens were studied. The effects of the phase composition and microstructure on the thermoelectric properties were discussed. The thermoelectric figure of merit values (ZT) of the silicon borides increased with increasing temperature. The plasma sintered silicon boride containing 90at%B showed the largest ZT value, which reached 0.2 at 1100K.
Journal
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- IEEJ Transactions on Fundamentals and Materials
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IEEJ Transactions on Fundamentals and Materials 116 (3), 248-252, 1996
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390001204599966336
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- NII Article ID
- 130006839674
- 10002819141
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- NII Book ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL BIB ID
- 3925960
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed