キャリア濃度傾斜構造をもつBi<sub>2</sub>Te<sub>3</sub>系単結晶の育成とその熱電特性の評価

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  • Single crystal growth and thermoelectric properties of Bi<sub>2</sub>Te<sub>3</sub> compounds with graded carrier concentration
  • キャリア濃度傾斜構造をもつBi2Te3系単結晶の育成とその熱電特性の評価
  • キャリア ノウド ケイシャ コウゾウ オ モツ Bi2Te3ケイ タンケッショ

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Bi2Te2.85Se0.15 single crystals involving a p-n inversion layer were successfully grown by using Czachralski technique. The n-type single crystal with a low electron concentration of 1.6×1017cm-3, which is two orders in magnitude lower than that of the starting material, was cut down across the p-n inversion layer. The Hall mobility of this specimen attained to an extremely high value of 35000cm2/V sec at 10K, even then the electron concentration was in degenerate state. <br>The π-shaped thermocouple was constructed with two legs cut down from the as-grown boules and with the cupper electrodes. The figure of merit of the thermocouple was 2.3×10-3 K-1 at 245K. It is superior to that of materials prepared by Bridgman method. Accordingly, it was found that the Czochralski technique is a promising method for fabricating the p-n thermocouple with a graded carrier concentration.

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