Evaluation of Microscopic Structural Randomness in SiO₂ through Analysis of Decay Profile of Photoluminescence

• Ishii Keisuke

  Waseda University

• Seol Kwang Soo

  Waseda University

• Ohki Yoshimichi

  Waseda University

• Nishikawa Hiroyuki

  Tokyo Metropolitan University

Bibliographic Information

Other Title

• 発光減衰曲線の解析によるSiO₂の微視的構造の乱雑さの評価
• 発光減衰曲線の解析によるSiO2の微視的構造の乱雑さの評価
• ハッコウ ゲンスイ キョクセン ノ カイセキ ニヨル SiO2 ノ ビシテキ

Abstract

Microscopic structural randomness in SiO₂, a typical electrical insulating material, was evaluated by observing the decay profile of the photoluminescence due to the oxygen vacancy (≡Si-Si≡). As the samples with different degrees of randomness, an ionimplanted thermal SiO₂ film, SiO₂ films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane with and without doped fluorine, a buried oxide film prepared with the method of separation by ion-implanted oxygen (SIMOX), and a bulk silica glass prepared by the soot-remelting method were tested. By analyzing the decay profile with a stretched-exponential function, it was found that the deviation of the decay profile from a single exponential function is larger in the sample whose structural randomness is presumed to be larger from the measurements of infrared absorption and the chemical etch rate in HF solution.

Journal

• IEEJ Transactions on Fundamentals and Materials

  IEEJ Transactions on Fundamentals and Materials 116 (10), 881-885, 1996

  The Institute of Electrical Engineers of Japan

Keywords

• SiO₂

Details

• CRID: 1390282679575907712
• NII Article ID: 130006839007
• NII Article ID: 10002820421
• NII Book ID: AN10136312
• DOI: 10.1541/ieejfms1990.116.10_881
• ISSN: 13475533
• ISSN: 03854205
• NDL BIB ID: 4037162
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4037162
• Web Site: https://www.jstage.jst.go.jp/article/ieejfms1990/116/10/116_10_881/_pdf
• Data Source:
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  • CiNii Articles
• Abstract License Flag: Disallowed