スプリットターゲットを用いたレーザアブレーション法によるZnO系透明導電膜の作製

• 鈴木 晶雄

  大阪産業大

• 松下 辰彦

  大阪産業大

• 福田 智也

  大阪産業大

• 藤原 秀規

  大阪産業大

• 奥田 昌宏

  大阪府立大

書誌事項

タイトル別名

• Preparation of Transparent Conducting ZnO Thin Films Prepared by Laser Ablation Method Using Split Target
• スプリット ターゲット オ モチイタ レーザ アブレーションホウ ニヨル Zn

抄録

Thin films of ZnO doped with Al₂O₃, Ga₂O₃, In₂O₃, SnO₂, ITO, Ag₂O and CuO have been deposited on glass substrates by a pulsed laser deposition technique using an ArF laser (λ=193nm). The lowest resistivity was obtained for films deposited from the target with 2wt% Al₂O₃ (AZO(2wt%)); the resistivity of 1.43×10^-4Ω•cm was obtained at a substrate temperature of 300°C. On the other hand, there were minute irregularities on the surfaces of ZnO films doped with 4-7wt% Ga₂O₃ (GZO(4-7wt%)). Therefore, to obtain ZnO films with low resistivity and surface flatness, the laminated films were fabricated from the split target consisting of AZO (2wt%)and GZO (4-7wt%), It was found that (1) the lowest resistivity of 1.82×10-4Ω•cm and the lowest sheet resistance of 4Ω/sq were obtained for the 400nm thick film with four layers, (2) optical transmittance above 90% was obtained in the visible region of the spectrum and (3) there were minute irregularities (average roughness 0.56nm) on the surface of the films.

収録刊行物

• 電気学会論文誌．　Ａ

  電気学会論文誌．　Ａ 117 (4), 405-410, 1997

  一般社団法人 電気学会

キーワード

• スプリットターゲット
• レーザアブレーション
• ZnO:Al透明導電膜
• ZnO:Ga透明導電膜
• 高精細TFT型液晶ディスプレイ用透明電極
• 薄膜太陽電池用透明電極

詳細情報

• CRID: 1390282679577316992
• NII論文ID: 10002821741
• NII書誌ID: AN10136312
• DOI: 10.1541/ieejfms1990.117.4_405
• ISSN: 13475533
• ISSN: 03854205
• ISSN: http://id.crossref.org/issn/03854205
• NDL書誌ID: 4171852
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4171852
• Web Site: https://www.jstage.jst.go.jp/article/ieejfms1990/117/4/117_4_405/_pdf
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可