Tetraethoxysilaneを用いたプラズマCVD法における気相分解過程

• 前田 直宏

  福井高専

• 沖村 邦雄

  福井高専

• 柴田 明

  福井高専

書誌事項

タイトル別名

• Investigation on Dissociation Process in Plasma Enhanced Chemical Vapor Deposition Using Tetraethoxysilane
• Tetraethoxysilane オ モチイタ プラズマ CVDホウ ニ オ

抄録

Dissociation in plasma enhanced chemical vapor deposition for SiO₂ deposition using Tetraethoxysilane (TEOS) was investigated by means of mass spectrometry. First we showed basic dissociation patterns of TEOS by electron impact. It was shown that the TEOS was dissociated by electron impact at low electron energy below 7eV removing the ethyl group (C₂H₅). Next we presented dissociation patterns in TEOS/He plasma in order to eliminate the effect of oxidation. Finally dissociation in TEOS/O₂ plasma was clarified. As the results, it was found that the oxidation plays a indispensable role for deposition of high quality SiO₂ films due to the decrease in high molecular compounds with carbon (C) and hydrogen (H) although the TEOS is highly dissociated by electron impact.

収録刊行物

• 電気学会論文誌．　Ａ

  電気学会論文誌．　Ａ 117 (8), 852-857, 1997

  一般社団法人 電気学会

キーワード

• プラズマCVD法
• SiO₂膜
• 分解過程
• 質量分析
• 電子衝突
• 酸化

詳細情報

• CRID: 1390282679577096192
• NII論文ID: 130006839918
• NII論文ID: 10002822601
• NII書誌ID: AN10136312
• DOI: 10.1541/ieejfms1990.117.8_852
• ISSN: 13475533
• ISSN: 03854205
• NDL書誌ID: 4266939
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4266939
• Web Site: https://www.jstage.jst.go.jp/article/ieejfms1990/117/8/117_8_852/_pdf
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