Fabrication of Si-As-Te Amorphous Semiconductor in a Microgravity Environment
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- HAMAKAWA Yoshihiro
- Faculty of Engineering Science, Osaka University
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- SHAMS-KOLAHI Wahid
- Faculty of Engineering Science, Osaka University
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- HATTORI Kiminori
- Faculty of Engineering Science, Osaka University
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- SADA Chitose
- Faculty of Engineering Science, Osaka University
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- OKAMOTO Hiroaki
- Faculty of Engineering Science, Osaka University
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Abstract
Ternary chalcogenide Si-As-Te amorphous semiconductors have been fabricated under a microgravity environment in the Spacelab J. The objective of the flight experiment was to fabricate homogeneous multi-component amorphous semiconductors in the microgravity en vironment in space, and to make a series of comparative characterizations of the amorphous structures as well as their electronic properties for materials prepared in space and under terrestrial gravity environment. In this paper, firstly the reasons for selecting this material system for FMPT (First Material Processing Test) experiment are explained, and discussed in association with essential advantages of Six(As2Te3) 1- x system in basic physics research and technological applications. Secondly, some details of the FMPT experimental procedure including a comprehensive description of tested materials are described. Finally, preliminary results on the electrical and optical properties as a new type of synthetic semiconductor are presented and discussed with a particular emphasis on the difference from terrestrial materials.
Journal
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- Journal of The Japan Society of Microgravity Application
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Journal of The Japan Society of Microgravity Application 12 (1), 27-, 1995-01-31
The Japan Society of Microgravity Application
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Details 詳細情報について
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- CRID
- 1391694356260606208
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- NII Article ID
- 10002844473
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- NII Book ID
- AN10537663
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- ISSN
- 09153616
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- Text Lang
- en
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- Data Source
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- JaLC
- CiNii Articles
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- Abstract License Flag
- Disallowed