Measurement of Temperature Fluctuations in Marangoni Convection in a Half-zone Silicon Melt on Board the TR-IA-4 Rocket

  • NAKAMURA Shin
    Fundamental Research Laboratories, NEC Corporation (#Present address: Institute of Advanced Material Study, Kyushu University)
  • HIBIYA Taketoshi
    Fundamental Research Laboratories, NEC Corporation (#Present address: Institute of Advanced Material Study, Kyushu University)
  • KAKIMOTO Koichi
    Fundamental Research Laboratories, NEC Corporation (#Present address: Institute of Advanced Material Study, Kyushu University)
  • IMAISHI Nobuyuki
    Institute of Advanced Material Study, Kyushu University
  • NISHIZAWA Shin-ichi
    Department of Chemical Engineering, Waseda University (## Present address: Electrotechnical Laboratory)
  • HIRATA Akira
    Department of Chemical Engineering, Waseda University (## Present address: Electrotechnical Laboratory)
  • MUKAI Kusuhiro
    Department of Materials Science and Engineering, Kyushu Institute of Technology
  • YODA Shin-ichi
    Space Experiment Department, National Space Development Agency of Japan
  • MORITA Tomoji S.
    Japan Space Utilization Promotion Center

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  • Measurement of Temperature Fluctuations

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Abstract

Temperature fluctuation measurements in a half-zone bridge of molten silicon are conducted under microgravity on board the TR-IA-4 rocket launched on 25 Aug. 1995. Two types of temperature fluctuations are observed during the melting process of silicon and after the formation of cylindrical half-zone melt. The former fluctuation with a frequency of about 0.1 Hz has an antiphase correlation of temperatures measured in thermocouples separated by 90- degree azimuthal angles. The latter fluctuation in the cylindrical liquid bridge has no remarka­ble frequency; however, it tends to have the antiphase correlation in between thermocouples with 180-degree azimuthal angles. Keyword: Marangoni convection, Temperature fluctuation, Floating zone silicon crystal growth, TR-IA rocket

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