高純度ダイヤモンド単結晶の合成 Synthesis of High Purity Diamond Single Crystal

この論文にアクセスする

この論文をさがす

著者

抄録

This paper presents the outline of the temperature gradient method at high pressures and high temperatures for the epitaxial growth of a high purity diamond single crystal. Several elimination techniques of the impurities (mainly nitrogen atoms) in a single crystal are discussed. High purity diamond single crystals, containing impurities as low as 0. 1 ppm, are successfully grown up to 1 or 2 carats by adding titanium and copper in the solvent bath in the temperature gradient method. In order to reduce the nitrogen content of a solvent bath, titanium is added as a nitrogen getter, while copper is added to decompose titanium-carbide which is contained in a crystal as bulky inclusion by adding of titanium.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 4(4), 308-314, 1995-11-01 

    The Japan Society of High Pressure Science and Technology

参考文献:  10件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10002847829
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    0917639X
  • データ提供元
    CJP書誌  J-STAGE 
ページトップへ