新炭素系材料　高純度ダイヤモンド単結晶の合成

• 佐藤 周一

  住友電気工業株式会社伊丹研究所

• 角谷 均

  住友電気工業株式会社伊丹研究所

書誌事項

タイトル別名

• Synthesis of High Purity Diamond Single Crystal.

抄録

This paper presents the outline of the temperature gradient method at high pressures and high temperatures for the epitaxial growth of a high purity diamond single crystal. Several elimination techniques of the impurities (mainly nitrogen atoms) in a single crystal are discussed. High purity diamond single crystals, containing impurities as low as 0. 1 ppm, are successfully grown up to 1 or 2 carats by adding titanium and copper in the solvent bath in the temperature gradient method. In order to reduce the nitrogen content of a solvent bath, titanium is added as a nitrogen getter, while copper is added to decompose titanium-carbide which is contained in a crystal as bulky inclusion by adding of titanium.

収録刊行物

• 高圧力の科学と技術

  高圧力の科学と技術 4 (4), 308-314, 1995

  日本高圧力学会

キーワード

• synthetic diamond crystal
• high purity diamond crystal
• type IIa diamond
• high pressure and high temperature method
• temperature gradient method

詳細情報

• CRID: 1390282679358331520
• NII論文ID: 10002847829
• NII書誌ID: AN10452913
• DOI: 10.4131/jshpreview.4.308
• ISSN: 13481940
• ISSN: 0917639X
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可