Synthesis of High Purity Diamond Single Crystal.

• Satoh Shuichi

  Itami Research Laboratories, Sumitomo Electric Industries Ltd.

• Sumiya Hitoshi

  Itami Research Laboratories, Sumitomo Electric Industries Ltd.

Bibliographic Information

Other Title

• 新炭素系材料　高純度ダイヤモンド単結晶の合成

Abstract

This paper presents the outline of the temperature gradient method at high pressures and high temperatures for the epitaxial growth of a high purity diamond single crystal. Several elimination techniques of the impurities (mainly nitrogen atoms) in a single crystal are discussed. High purity diamond single crystals, containing impurities as low as 0. 1 ppm, are successfully grown up to 1 or 2 carats by adding titanium and copper in the solvent bath in the temperature gradient method. In order to reduce the nitrogen content of a solvent bath, titanium is added as a nitrogen getter, while copper is added to decompose titanium-carbide which is contained in a crystal as bulky inclusion by adding of titanium.

Journal

• The Review of High Pressure Science and Technology

  The Review of High Pressure Science and Technology 4 (4), 308-314, 1995

  The Japan Society of High Pressure Science and Technology

Keywords

• synthetic diamond crystal
• high purity diamond crystal
• type IIa diamond
• high pressure and high temperature method
• temperature gradient method

Details

• CRID: 1390282679358331520
• NII Article ID: 10002847829
• NII Book ID: AN10452913
• DOI: 10.4131/jshpreview.4.308
• ISSN: 13481940
• ISSN: 0917639X
• Text Lang: ja
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed