高純度ダイヤモンド単結晶の合成II Synthesis of High Purity Diamond Single Crystal II

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抄録

High purity synthetic diamond crystals (type IIa) grown by the temperature gradient method with impurities less than 0. 1 ppm were studied on the crystal defects and residual strains in details by polarizing microscopy, double-crystal X-ray rocking curve measurement, X-ray topography and Raman spectroscopy. The results indicated that the synthetic type IIa diamonds had less crystal defects and lower residual strain than natural diamonds or synthetic type I b diamonds did. Furthermore it was found that some of dislocations in the synthetic type IIa diamond could be removed and the crystal quality of the diamonds could be improved by using strain-free and low defect crystals for the seeds.

収録刊行物

  • 高圧力の科学と技術 = The Review of high pressure science and technology  

    高圧力の科学と技術 = The Review of high pressure science and technology 5(2), 110-115, 1996-05-20 

    The Japan Society of High Pressure Science and Technology

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各種コード

  • NII論文ID(NAID)
    10002848129
  • NII書誌ID(NCID)
    AN10452913
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    0917639X
  • データ提供元
    CJP書誌  J-STAGE 
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