ダイヤモンドの高圧合成　　ｃＢＮ単結晶の高圧合成

• 谷口 尚

  科学技術庁 無機材質研究所

書誌事項

タイトル別名

• Synthesis of cBN Single Crystal under High Pressure.
• cBN タンケッショウ ノ コウアツ ゴウセイ

抄録

A single crystal of cubic boron nitride (cBN) was grown under the high-pressure and high-temperature conditions of 5. 5 GPa and 1500-1700 for 10min. -100 h. A temperature gradient method was employed for the crystal growth by using lithium boron nitride as a solvent. In order to characterize the growth features of cBN single crystal on seed surfaces, large seeds of diamond crystals were employed, and the heteroepitaxial growth of cBN on (100) and (111) diamond surfaces was studied. The initialgrowth feature of the cBN crystal was found on the diamond seed surface after a growing time of 10 min. On the (100) seed surface, typical anti-phase boundaries were exhibited in the grown crystals, while they were not seen in crystals grown on a (111) surface. Two types of growth features such as (111) and (113) facetted growth typically appeared in the grown crystal on the (111) surface. Considering the growth process under a constant P-T growing condition, the growth rate of cBN crystal was significantly small as compared to that of diamond.

収録刊行物

• 高圧力の科学と技術

  高圧力の科学と技術 8 (3), 171-176, 1998

  日本高圧力学会

キーワード

• cBN single crystal
• diamond seed
• temperature gradient method
• heteroepitaxial growth
• anti-phase boundary

詳細情報

• CRID: 1390282679357288576
• NII論文ID: 10002849305
• NII書誌ID: AN10452913
• DOI: 10.4131/jshpreview.8.171
• ISSN: 13481940
• ISSN: 0917639X
• NDL書誌ID: 4546293
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4546293
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可