The equilibrium segregation coefficient and activity for boron at Si/SiO_2 interface
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- KOSHIGOE Fumihiro
- Tokyo Institute of Technology
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- 川岸 京子
- Tokyo Institute of Technology
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- 福山 博之
- Tokyo Institute of Technology
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- 須佐 匡裕
- Tokyo Institute of Technology
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- 永田 和宏
- Tokyo Institute of Technology
Bibliographic Information
- Other Title
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- シリコン/シリカ膜界面におけるホウ素の平衡偏析係数と活量
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Journal
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- 材料とプロセス : 日本鉄鋼協会講演論文集 = Current advances in materials and processes : report of the ISIJ meeting
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材料とプロセス : 日本鉄鋼協会講演論文集 = Current advances in materials and processes : report of the ISIJ meeting 11 (4), P10-, 1998-09-01
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Details 詳細情報について
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- CRID
- 1571135649114567808
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- NII Article ID
- 10003799137
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- NII Book ID
- AN10056461
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- ISSN
- 09146628
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- Text Lang
- ja
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- Data Source
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- CiNii Articles