Preparation of Nitrogen-Doped ZnSe Thin Films by Radical-Assisted MOCVD

• Hara Yoshinori

  Department of Materials Science, Faculty of Engineering, Tohoku University

• Yonekura Hiroshi

  Department of Materials Science, Faculty of Engineering, Tohoku University

• Noda Yasutoshi

  Department of Materials Science, Faculty of Engineering, Tohoku University

書誌事項

タイトル別名

• Preparation of Nitrogen-Doped ZnSe Thin

抄録

Radical-assisted metalorganic chemical vapor deposition of ZnSe thin films was made using nitrogen trifluoride (NF₃) as co-reactant and source of nitrogen atoms. The secondary ion mass spectroscopy analysis indicated that the concentration profile of nitrogen in a ZnSe film was not uniform in regard to the thickness and was the order of magnitude of 10²⁵–10²⁶ m⁻³.<BR>The photoluminescence (PL) spectra of all the films showed weak excitonic emission bound due to the neutral nitrogen atom pair (I₁^N–N) and intense donor-acceptor pair emission (DAP). The net acceptor concentration obtained from capacitance-voltage measurements was 1.3×10²³ m⁻³ at maximum, which increased to 1.3×10²⁴ m⁻³ after heat-treatment.

収録刊行物

• Materials Transactions, JIM

  Materials Transactions, JIM 39 (3), 427-431, 1998

  社団法人 日本金属学会

キーワード

• metalorganic chemical vapor deposition
• zinc selenide
• nitrogen doping
• photoluminescence
• bound exciton
• nitrogen pair
• net acceptor concentration

詳細情報

• CRID: 1390282679223128064
• NII論文ID: 130003422562
• NII論文ID: 10003802282
• NII書誌ID: AA10699969
• DOI: 10.2320/matertrans1989.39.427
• COI: 1:CAS:528:DyaK1cXivFKgurk%3D
• ISSN: 2432471X
• ISSN: 09161821
• NDL書誌ID: 4440484
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4440484
• Web Site: https://www.jstage.jst.go.jp/article/matertrans1989/39/3/39_3_427/_pdf
• 本文言語コード: en
• データソース種別:
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