Effect of Oxygen Gas Addition on Preparation of Iridium and Platinum Films by Metal-Organic Chemical Vapor Deposition
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- Goto Takashi
- Institute for Materials Research, Tohoku University
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- Vargas J. Roberto
- Institute for Materials Research, Tohoku University
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- Hirai Toshio
- Institute for Materials Research, Tohoku University
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The effect of oxygen gas addition on deposition rates, composition and microstructure was investigated in preparing Ir and Pt films by metal-organic chemical vapor deposition using Ir- and Pt-acetylacetonate precursors. Without the addition of oxygen gas, 20 mass% of carbon at most was contained in the films. The carbon was amorphous, surrounding metal particles of several nanometers in diameter. The addition of oxygen gas is effective in obtaining carbon-free Ir and Pt films, and the films grow epitaxially on MgO and sapphire single crystal substrates.
収録刊行物
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- Materials Transactions, JIM
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Materials Transactions, JIM 40 (3), 209-213, 1999
社団法人 日本金属学会
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詳細情報
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- CRID
- 1390001204248592512
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- NII論文ID
- 130003422594
- 10003805795
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- NII書誌ID
- AA10699969
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- COI
- 1:CAS:528:DyaK1MXjsFWqu7s%3D
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- ISSN
- 2432471X
- 09161821
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- HANDLE
- 10097/52260
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- NDL書誌ID
- 4689674
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- IRDB
- NDL
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- CiNii Articles
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- 使用不可