シリコン単色放射温度計を用いた実用温度標準の確立のための検討

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  • Study for Establishing a Practical Temperature Standard by Using Silicon Narrow-Band Radiation Thermometer
  • シリコン タンショク ホウシャ オンドケイ オ モチイタ ジツヨウ オンド ヒ

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This paper proposes a 900nm silicon narrow-band radiation thermometer, which is calibrated by a set of fixed point blackbody furnaces, as for a practical temperature standard of good accuracy.<br>This radiation thermometer covers the temperature range from 420°C to 2000°C and its focal range extends from 40cm, of which the object area is 3mm in diameter, to infinity. The image of the measured plane is focused by an objective lens on a mirror with an aperture of 0.75mm diameter. The light passed the aperture travels through a condenser lens, through an interference filter, of which the maximum transmission wavelength is 900nm and the half width 14nm, and reaches to a silicon photo-cell to be converted into an electric current. The optical axis of the thermometer is set on to the object by using a finder system which utilizes reflected light from the mirror.<br>The photo-current from the silicon photo-cell is converted by a four-range FET amplifier into a voltage signal and then measured by an electronic digital voltmeter. By selecting appropriate range, a resolution of 1K at 420°C and better than 0.01K above 600°C can be obtained. When the fluctuation of room temperature is smaller than ±1K, the thermometer has a reproducibility of ±0.1K for above 600°C range.<br>The relation between the output voltage V(T) of this radiation thermometer and temperature T of the object can be expressed as follows:<br>V(T)=Cexp(-c2/AT+B)where c2=0.014 388m·K.<br>When the calibration to determine the coefficients A, B and C is made by using three fixed point blackbody furnaces of Al, Ag and Cu with precision of 0.3K, a temperature scale for practical standard of ±0.5K precision can be realized with this thermometer in the temperature range from 600 to 1100°C.

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