Giga-bit Scale DRAM Cell with New Simple Ru/(Ba, Sr)TiO_3/Ru Stacked Capacitors Using X-ray Lithography

• NISHIOKA Y.

収録刊行物

• Dig. Int. Electron Devices Meeting, Washington D. C.

  Dig. Int. Electron Devices Meeting, Washington D. C. 903 1995

詳細情報

• CRID: 1574231873956063232
• NII論文ID: 10004155729
• NII書誌ID: BA28152188
• データソース種別:
  • CiNii Articles