A 4500V Injection Enhanced Insulated Gate Bipolar Transistor(IEGT)Operating in a Mode Similar to a Thyristor

• KITAGAWA M.

収録刊行物

• IEEE IEDM Technical Digest

  IEEE IEDM Technical Digest 679-682, 1993

詳細情報

• CRID: 1572824499091249536
• NII論文ID: 10004163510
• NII書誌ID: BA21866324
• データソース種別:
  • CiNii Articles