High-rate ion etching of GaAs and Si at low ion energy by using an electron beam excited plasma system

• YU J. Z.

収録刊行物

• J. Vac. Sci. Technol. B

  J. Vac. Sci. Technol. B 6 1626-, 1988

詳細情報

• CRID: 1572824499091635968
• NII論文ID: 10004168667
• データソース種別:
  • CiNii Articles