Crystallinity of p-Type Porous Silicon and Its Change with Heat-Treatment

• OGATA Yukio H.

  Institute of Advanced Energy, Kyoto University

• YASUDA Ryo

  Institute of Advanced Energy, Kyoto University

• TSUBOI Takashi

  Institute of Advanced Energy, Kyoto University

• OTSUKI Akira

  Institute of Advanced Energy, Kyoto University

• SAKKA Tetsuo

  Institute of Advanced Energy, Kyoto University

Abstract

The crystallinity of p-type porous silicon has been investigated with X-ray diffraction (XRD), thermal analysis, and transmission electron microscopy (TEM). Each XRD peak is composed of a sharp Bragg reflection peak and a diffuse diffraction. The diffuse diffraction is not related to the presence of amorphous phase judging from the thermal analysis and the comparison with the XRD of amorphous silicon. The shape of the XRD pattern changes with heat-treatment at temperature as low as 400 °C. The TEM observation also reveals the enhancement of crystallinity by the heat-treatment. The results imply that no amorphous phase is formed in porous silicon with high resistivity.

Journal

• Electrochemistry

  Electrochemistry 67 (12), 1203-1205, 1999-12-05

  The Electrochemical Society of Japan

Keywords

• Porous Silicon
• Heat-Treatment
• X-ray Diffraction
• Transmission Electron Microscopy

Details

• CRID: 1390001277392951680
• NII Article ID: 10004275419
• NII Book ID: AN00151637
• DOI: 10.5796/electrochemistry.67.1203
• ISSN: 21862451
• ISSN: 13443542
• NDL BIB ID: 4927629
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4927629
• Web Site: https://www.jstage.jst.go.jp/article/electrochemistry/67/12/67_1203/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Allowed