Fine-Grained SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films by Low Temperature Annealing

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  • Ogata Nobuhito
    Functional Devices Research Laboratories, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri, Nara 632, Japan
  • Nagata Masaya
    Functional Devices Research Laboratories, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri, Nara 632, Japan
  • Ishihara Kazuya
    Functional Devices Research Laboratories, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri, Nara 632, Japan
  • Urashima Hitoshi
    Functional Devices Research Laboratories, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri, Nara 632, Japan
  • Okutoh Akira
    Functional Devices Research Laboratories, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri, Nara 632, Japan
  • Yamazaki Shinobu
    Functional Devices Research Laboratories, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri, Nara 632, Japan
  • Mitarai Shun
    Functional Devices Research Laboratories, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri, Nara 632, Japan
  • Kudo Jun
    Functional Devices Research Laboratories, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri, Nara 632, Japan

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タイトル別名
  • Fine-Grained SrBi2Ta2O9 Thin Films by Low Temperature Annealing.
  • Fine-Grained SrBi2Ta2O9 Thin Films by L

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A new low pressure annealing method for preparation of SrBi2Ta2O9 thin films is proposed. These thin films were prepared on Pt/TiO2/SiO2/Si substrates by the metalorganic decomposition (MOD) method, and their structural and electrical properties were investigated. Low pressure annealing was performed at 650°C for 60 min in a 2 Torr oxygen ambient per coating. The films were well crystallized and exhibited fine-grained and dense structures with grain size of about 50 nm. Pr=4.9 µ C/cm2, Ec=24 kV/cm, IL=8.6× 10-8 A/cm2 at a applied voltage of 3 V and breakdown voltage (VB) of over 20 V were obtained for the 200-nm-thick films. Futhermore, in the 100-nm-thick SBT film, a saturation voltage of 1 V was obtained. Pr=3.6 µ C/cm2, Ec=25 kV/cm, IL=5.5× 10-8 A/cm2 at 1 V and VB was over 10 V. Therefore, this method is very useful for highly integrated ferroelectric nonvolatile memory application.

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