逆回復動作時の高耐圧ダイオードの発振現象の検討 Study Of Oscillation In High Voltage Diode At Recovery Operation

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At present, switching devices such as GCT (Gate Commutated Turn-off) thyristor and HVIGBT (High Voltage IGBT) are remarkably progressing and able to switch fast at high DC operation voltage above 2.5kV. However, a freewheeling diode which should realize the recovery performance similar to the turn-on performance of switching devices is not developed. In the high voltage diode, a main problem of the recovery performance is to prevent the voltage-oscillation. The voltage-oscillation brings miss-operation of driving circuit or voltage destruction of oneself. As the diode during the recovery operation can be regarded as a combination of one capacitance and two resistances, the oscillation mechanism was studied by replacing the diode to LCR circuit. As this results, it was clear that the diode during the recovery operation made surely the oscillation. On the basis of this analysis, the diode structure to mitigate oscillation was proposed.

収録刊行物

  • 電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society  

    電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society 119(11), 1401-1408, 1999-11 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10004297523
  • NII書誌ID(NCID)
    AN10012320
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09136339
  • NDL 記事登録ID
    4891952
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-1608
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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