Study Of Oscillation In High Voltage Diode At Recovery Operation

• Satoh Katsumi

  Mitsubishi Electric Corp.

• Hirano Noritoshi

  Melnic Corp.

• Kawakami Akira

  Mitsubishi Electric Corp.

• Iwamoto Hideo

  Mitsubishi Electric Corp.

Bibliographic Information

Other Title

• 逆回復動作時の高耐圧ダイオードの発振現象の検討
• ギャクカイフク ドウサジ ノ コウタイアツ ダイオード ノ ハッシン ゲンショウ ノ ケントウ

Abstract

At present, switching devices such as GCT (Gate Commutated Turn-off) thyristor and HVIGBT (High Voltage IGBT) are remarkably progressing and able to switch fast at high DC operation voltage above 2.5kV. However, a freewheeling diode which should realize the recovery performance similar to the turn-on performance of switching devices is not developed. In the high voltage diode, a main problem of the recovery performance is to prevent the voltage-oscillation. The voltage-oscillation brings miss-operation of driving circuit or voltage destruction of oneself. As the diode during the recovery operation can be regarded as a combination of one capacitance and two resistances, the oscillation mechanism was studied by replacing the diode to LCR circuit. As this results, it was clear that the diode during the recovery operation made surely the oscillation. On the basis of this analysis, the diode structure to mitigate oscillation was proposed.

Journal

• IEEJ Transactions on Industry Applications

  IEEJ Transactions on Industry Applications 119 (11), 1401-1408, 1999

  The Institute of Electrical Engineers of Japan

Keywords

• 高耐圧ダイオード
• 逆回復動作
• LCR回路
• 固有振動

Details

• CRID: 1390001204659560192
• NII Article ID: 10004297523
• NII Book ID: AN10012320
• DOI: 10.1541/ieejias.119.1401
• ISSN: 13488163
• ISSN: 09136339
• NDL BIB ID: 4891952
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4891952
• Web Site: http://www.jstage.jst.go.jp/article/ieejias1987/119/11/119_11_1401/_pdf
• Data Source:
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  • CiNii Articles
• Abstract License Flag: Disallowed