NH4OH-Treated Si(111) Surfaces Studied by Spectroscopic Ellipsometry and Atomic Force Microscopy

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著者

    • Kobayashi Kazuyuki
    • Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376, Japan
    • Adachi Sadao
    • Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376, Japan
    • Takizawa Hidekazu
    • Metallic Materials Division, Industrial Research Institute of Nagano Prefecture, Nagano-shi, Nagano 380, Japan

抄録

Chemically treated Si(111) surfaces in NH4OH:H2O=1:5 alkaline etchant at 80° C were investigated using spectroscopic ellipsometry (SE) and ex situ atomic force microscopy (AFM). The SE data indicate that when a native oxide layer is partly etch-removed, the resulting surface is very rough. The roughened layer thickness in this case is ∼4 nm with a void fraction of ∼40 %, obtained using an effective medium approximation; the AFM image for this sample indicates a roughened surface of ∼4.5 nm rms. Just after the oxide layer is etched away completely, the SE data yield the spectrum of a nearly flat Si surface. The AFM image confirms a microscopically flat surface (∼0.2 nm rms) with the emergence of relatively large triangular hollows. With further etching, the Si surface becomes microscopically rougher, as revealed by the SE and AFM.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(2A), 515-519, 1996-02-15 

    INSTITUTE OF PURE AND APPLIED PHYSICS

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各種コード

  • NII論文ID(NAID)
    10004349750
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • ISSN
    0021-4922
  • データ提供元
    CJP書誌  JSAP 
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