NH4OH-Treated Si(111) Surfaces Studied by Spectroscopic Ellipsometry and Atomic Force Microscopy.

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  • Kobayashi Kazuyuki
    Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu–shi, Gunma 376, Japan
  • Adachi Sadao
    Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu–shi, Gunma 376, Japan
  • Takizawa Hidekazu
    Metallic Materials Division, Industrial Research Institute of Nagano Prefecture, Nagano–shi, Nagano 380, Japan

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  • NH<sub>4</sub>OH-Treated Si(111) Surfaces Studied by Spectroscopic Ellipsometry and Atomic Force Microscopy

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Abstract

Chemically treated Si(111) surfaces in NH4OH:H2O=1:5 alkaline etchant at 80° C were investigated using spectroscopic ellipsometry (SE) and ex situ atomic force microscopy (AFM). The SE data indicate that when a native oxide layer is partly etch-removed, the resulting surface is very rough. The roughened layer thickness in this case is ~ 4 nm with a void fraction of ~ 40 %, obtained using an effective medium approximation; the AFM image for this sample indicates a roughened surface of ~ 4.5 nm rms. Just after the oxide layer is etched away completely, the SE data yield the spectrum of a nearly flat Si surface. The AFM image confirms a microscopically flat surface (~ 0.2 nm rms) with the emergence of relatively large triangular hollows. With further etching, the Si surface becomes microscopically rougher, as revealed by the SE and AFM.

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