Electroreflectance Study of (AlxGa1-x)0.5In0.5P Alloys

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著者

    • Adachi Sadao
    • Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376, Japan
    • Ozaki Shunji
    • Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376, Japan
    • Sato Masahiro
    • Research and Development Division, Sanken Electric Co., Ltd., Niiza-shi, Saitama 352, Japan
    • Ohtsuka Kouji
    • Research and Development Division, Sanken Electric Co., Ltd., Niiza-shi, Saitama 352, Japan

抄録

Electroreflectance spectroscopy has been applied to the study of (Al xGa1- x)0.5In0.5P quaternary systems lattice-matched to GaAs. The measurements are made at room temperature in the photon-energy range of 1.7–5.8 eV. The composition dependence of the E0, E0+Δ0, E1, E2 and E2+δ gaps has been determined. The lowest direct band gap is found to be given by E0(x)=1.90+0.57x+0.11×2 eV. The E0+Δ0, and E1 gaps are written as similar quadratic equations. On the other hand, the variation of the E2 and E2+δ gaps is found to be approximately linear. The lowest direct-to-indirect gap crossover is also estimated to occur at x∼0.63.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(2A), 537-542, 1996-02-15 

    INSTITUTE OF PURE AND APPLIED PHYSICS

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各種コード

  • NII論文ID(NAID)
    10004349827
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • ISSN
    0021-4922
  • データ提供元
    CJP書誌  JSAP 
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