Investigation of Buffer Iayer of Cubic GaN Epitaxial Films on (100) GaAs Grown by Metalorganic-Hydrogen Chloride Vapor-Phase Epitaxy

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著者

    • Miura Yoshiki
    • Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
    • Takahashi Naoyuki
    • Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
    • Koukitu Akinori
    • Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
    • Seki Hisashi
    • Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan

抄録

Cubic GaN epitaxial layers are grown with GaN buffer layers of various thicknesses on (100) GaAs substrate using (CH3)3Ga, HCI and NH3 as starting materials. The full width at half-maximum (FWHM) of the X-ray peak, the surface roughness and the PL spectra show that the optimum thickness of the GaN buffer layer ranges from 20 to 50 nm. It is found by high-resolution TEM and electron diffraction measurements that a GaN buffer layer grown at 500° C is a polycrystal and becomes a single crystal upon thermal annealing at 850° C for 10 min prior to the growth of a cubic GaN epitaxial layer.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(2A), 546-550, 1996-02-15

    INSTITUTE OF PURE AND APPLIED PHYSICS

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各種コード

  • NII論文ID(NAID)
    10004349878
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • ISSN
    0021-4922
  • データ提供元
    CJP書誌  JSAP 
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