Investigation of Buffer Iayer of Cubic GaN Epitaxial Films on (100) GaAs Grown by Metalorganic-Hydrogen Chloride Vapor-Phase Epitaxy
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Cubic GaN epitaxial layers are grown with GaN buffer layers of various thicknesses on (100) GaAs substrate using (CH3)3Ga, HCI and NH3 as starting materials. The full width at half-maximum (FWHM) of the X-ray peak, the surface roughness and the PL spectra show that the optimum thickness of the GaN buffer layer ranges from 20 to 50 nm. It is found by high-resolution TEM and electron diffraction measurements that a GaN buffer layer grown at 500° C is a polycrystal and becomes a single crystal upon thermal annealing at 850° C for 10 min prior to the growth of a cubic GaN epitaxial layer.
- Jpn J Appl Phys
Jpn J Appl Phys 35(2A), 546-550, 1996-02-15
INSTITUTE OF PURE AND APPLIED PHYSICS